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Ру

Barashev Matvey N.

Position

Associate professor

Academic degree

PhD of Engineering Sciences (2002)

Faculty

Faculty of Environmental Engineering and Municipal Services

Department

Department of Structural Physics, Power Engineering and Electrical Engineering

Address

4, 2nd Krasnoarmeiskaya Str., St Petersburg, 190005

Phone +7 (812) 316-35-10,
+7 (812) 316-32-47
E-mail mbarashev@yandex.ru

Basic information

Education

SpecialtyPhysics QualificationPhysics Teacher (Kabardino-Balkarian State University, 1984)

Teaching

  • General physics.

Research interests

  • X-ray diffraction on multilayer monocrystalline structures,
  • Constructive and technological peculiarities of microwave frequency diodes.

Scientific conferences

Matvey Barashev has participated in two scientific conferences.

Publications

Matvey Barashev is the author and co-author of more than 40 scientific publications.

The most significant publications

Articles

  1. Barashev M. N. Relation between the Yield of Suitable Multi-Mesonic Silicon Avalanche-Span Millimeter-Wave Diodes and Structural Parameters / Tashilov A. S., Barashev M. N., Bagov A. N., Dyshekov A. A., Khapachev Yu. // Surface. - 2007. - No. 5. - P. 3-6.
  2. Tashilov, A. S. New Approaches in the Technology of High-Power Diode Microwave Generators in the Millimeter Range / A.S. Tashilov, Barashev M. N., Khapachev Yu. P., Ed. by Doctor of Technical Sciences, prof. B. S. Karamurzov and Dr. Sci. n., prof. A. A. Dyshekov. - Nalchik: Kab.-Balk. un-ty, 2007. - 60 p.
  3. Barashev, M. N. X-ray diffraction study of a two-layer heterostructure with a transition layer taking into account changes in electron density / M. N. Barashev // Surface. - 2005. - No. 6. - P. 13-17.
  4. Structural parameters and quality of multi-mess silicon avalanche-span diodes / A. S. Tashilov, M. N. Barashev, A. N. Bagov, Yu. P. Khapachev // II Ukrainian Scientific Conference on Semiconductor Physics (UNKFP-2) with participation foreign scientists: materials of the conference. - Chernivtsi: Ruta, 2004. - T. 2. - P. 563.
  5. X-Ray Diffraction Study of Disturbed Si(111) and InGaP/GaAs(111) Surface Layers Based on the Constant Strain Gradient Model / V. V. Lider, F. N. Chukhovskii, Yu.P. Khapachev, M.N. Barashev // FTT. - 1989. - T. 31. - Issue. 4. – P.74–81.
  6. Barashev, M. N. The new approaches in a process engineering high power microwaves diodes millimeter wave band / A. A. Dyshekov, A. S. Tashilov, М. N. Barashev // Journal of Guangdong Non-Ferrous Metals. – 2005. – Vol. 15, 52. – № 2–3. – P. 545–547.